Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | DirectFET™ isovolume SA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 1.7W |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 25V |
Current at 25 ° C - continuous drain (Id) | 16A |
On resistance (maximum) for different Ids and Vgs | 4.2 mΩ @ 16A,10V |
Vgs (th) (maximum) for different Ids | 2.1V @ 35µA |
Gate charge (Qg) at different Vgs (maximum) | 13nC @ 4.5V |
Input capacitance at different Vds (Ciss) (maximum) | 1350pF @ 13V |
FET function | Logic level gate |